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CSD17303Q5

Name: Texas Instruments CSD17303Q5
Brand: Texas Instruments
SKU: 595-CSD17303Q5
Price: 45498 IDR
Availability: InStock

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Mouser No:

595-CSD17303Q5

Mfr. No:

CSD17303Q5

Mfr.:

Texas Instruments

Description:

MOSFETs 30V N Channel NexFET Power MOSFET

Datasheet:

CSD17303Q5 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD17303Q5

In Stock: 3.387

Stock:: 3.387 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp45.498	Rp45.498
	Rp29.354	Rp293.540
	Rp19.997	Rp1.999.700
	Rp16.034	Rp8.017.000
	Rp15.392	Rp15.392.000
Full Reel (Order in multiples of 2500)
	Rp14.787	Rp36.967.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	2.4 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	18 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.2 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	10.4 ns
Forward Transconductance - Min:	114 S
Product Type:	MOSFETs
Rise Time:	16 ns
Series:	CSD17303Q5
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	11.4 ns
Unit Weight:	250 mg

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Datasheet

CSD17303Q5 Datasheet

Images

Mechanical Outline Drawing

PCN

Product Catalogs

Power Management Guide 2018 (Rev. R)

SPICE Models

CSD17303Q5 PSpice Model (Rev. A)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Philippines
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

CSD17303Q5 / CSD17313Q2 NexFET™ Power MOSFET

The Texas Instruments CSD17303Q5 and CSD17313Q2 30V N-Channel NexFET™ Power MOSFETs are designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The TI CSD17303Q5 and TI CSD17313Q2 NexFET Power MOSFETs feature ultralow Qg and Qgd as well as low thermal resistance.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.