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CSD18510Q5B

Name: Texas Instruments CSD18510Q5B
Brand: Texas Instruments
SKU: 595-CSD18510Q5B
Price: 53387 IDR
Availability: InStock

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Mouser No:

595-CSD18510Q5B

Mfr. No:

CSD18510Q5B

Mfr.:

Texas Instruments

Description:

MOSFETs 40-V N channel NexF ET power MOSFET si A A 595-CSD18510Q5BT

Datasheet:

CSD18510Q5B Datasheet

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More Information

Learn more about Texas Instruments CSD18510Q5B

In Stock: 8.960

Stock:: 8.960 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp53.387	Rp53.387
	Rp34.490	Rp344.900
	Rp24.584	Rp2.458.400
	Rp20.731	Rp10.365.500
	Rp17.649	Rp17.649.000
Full Reel (Order in multiples of 2500)
	Rp16.750	Rp41.875.000
	Rp16.200	Rp81.000.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD18510Q5BT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp73.384

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Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD18510Q5BT

Description:

MOSFETs 40-V N channel NexF ET power MOSFET si A A 595-CSD18510Q5B

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	1.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	153 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	156 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	15 ns
Forward Transconductance - Min:	147 S
Product Type:	MOSFETs
Rise Time:	17 ns
Series:	CSD18510Q5B
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	44 ns
Typical Turn-On Delay Time:	8 ns
Unit Weight:	120,700 mg

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Datasheet

CSD18510Q5B Datasheet

SPICE Models

Technical Resources

CSD18510Q5B TINA-TI Reference Design

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.