CSD18541F5T

Texas Instruments
595-CSD18541F5T
CSD18541F5T

Mfr.:

Description:
MOSFETs 60-V N channel NexF ET power MOSFET sin A 595-CSD18541F5

ECAD Model:
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In Stock: 2.390

Stock:
2.390 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp27.152 Rp27.152
Rp17.154 Rp171.540
Rp9.888 Rp988.800
Full Reel (Order in multiples of 250)
Rp9.888 Rp2.472.000
Rp8.439 Rp4.219.500
Rp7.577 Rp7.577.000
Rp7.265 Rp18.162.500
Rp6.586 Rp32.930.000
Rp6.348 Rp63.480.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
Rp9.173
Min:
1

Similar Product

Texas Instruments CSD18541F5
Texas Instruments
MOSFETs 60-V N channel NexF ET power MOSFET sin A 595-CSD18541F5T

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
N-Channel
1 Channel
60 V
2.2 A
65 mOhms
- 20 V, 20 V
1.75 V
11 nC
- 55 C
+ 150 C
500 mW
Enhancement
PicoStar
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Fall Time: 496 ns
Product Type: MOSFETs
Rise Time: 540 ns
Series: CSD18541F5
Factory Pack Quantity: 250
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 1076 ns
Typical Turn-On Delay Time: 572 ns
Unit Weight: 0,700 mg
Products found:
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Attributes selected: 0

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CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.