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CSD25211W1015

Name: Texas Instruments CSD25211W1015
Brand: Texas Instruments
SKU: 595-CSD25211W1015
Price: 15961 IDR
Availability: InStock

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Mouser No:

595-CSD25211W1015

Mfr. No:

CSD25211W1015

Mfr.:

Texas Instruments

Description:

MOSFETs PCh NexFET Power MOS FET

Datasheet:

CSD25211W1015 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD25211W1015

In Stock: 3.633

Stock:: 3.633 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp15.961	Rp15.961
	Rp9.815	Rp98.150
	Rp6.421	Rp642.100
	Rp5.375	Rp2.687.500
	Rp4.843	Rp4.843.000
Full Reel (Order in multiples of 3000)
	Rp4.018	Rp12.054.000
	Rp3.376	Rp20.256.000
	Rp3.009	Rp27.081.000
	Rp2.899	Rp69.576.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DSBGA-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3.2 A
Rds On - Drain-Source Resistance:	44 mOhms
Vgs - Gate-Source Voltage:	- 6 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Qg - Gate Charge:	3.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	14.2 ns
Forward Transconductance - Min:	12 S
Product Type:	MOSFETs
Rise Time:	8.8 ns
Series:	CSD25211W1015
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	36.9 ns
Typical Turn-On Delay Time:	13.6 ns
Unit Weight:	1,700 mg

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CSD25211W1015 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

NexFET P-Channel Power MOSFETs

Texas Instruments NexFET P-Channel Power MOSFETs are designed to deliver the lowest on-resistance and gate charge in a small outline with excellent thermal characteristics in an ultra-low profile. These Texas Instruments NexFET MOSFETs feature ultra-low on-resistance, ultra-low Q_g and Q_gd, and a small footprint of 1.0mm x 1.5mm.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.