CSD25481F4T

Texas Instruments
595-CSD25481F4T
CSD25481F4T

Mfr.:

Description:
MOSFETs 20V PCh FemtoFET MO SFET A 595-CSD25481F A 595-CSD25481F4

ECAD Model:
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In Stock: 3.222

Stock:
3.222 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp25.868 Rp25.868
Rp16.181 Rp161.810
Rp9.320 Rp932.000
Full Reel (Order in multiples of 250)
Rp9.320 Rp2.330.000
Rp7.944 Rp3.972.000
Rp7.118 Rp7.118.000
Rp6.825 Rp17.062.500
Rp6.751 Rp33.755.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
Rp7.705
Min:
1

Similar Product

Texas Instruments CSD25481F4
Texas Instruments
MOSFETs P-CH Pwr MOSFET 20V 90mohm A 595-CSD2548 A 595-CSD25481F4T

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
P-Channel
1 Channel
20 V
2.5 A
800 mOhms
- 12 V, 12 V
950 mV
913 pC
- 55 C
+ 150 C
500 mW
Enhancement
FemtoFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Country of Assembly: PH
Country of Diffusion: CN
Country of Origin: PH
Fall Time: 6.7 ns
Forward Transconductance - Min: 3.3 S
Product Type: MOSFETs
Rise Time: 3.6 ns
Series: CSD25481F4
Factory Pack Quantity: 250
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 16.9 ns
Typical Turn-On Delay Time: 4.1 ns
Unit Weight: 0,400 mg
Products found:
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CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541210000
MXHTS:
85412101
ECCN:
EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.