CSD25484F4T

Texas Instruments
595-CSD25484F4T
CSD25484F4T

Mfr.:

Description:
MOSFETs 20V P-Ch FemtoFET MO SFET A 595-CSD25484 A 595-CSD25484F4

ECAD Model:
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In Stock: 2.986

Stock:
2.986 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp13.393 Rp13.393
Rp12.640 Rp126.400
Rp7.797 Rp779.700
Full Reel (Order in multiples of 250)
Rp7.797 Rp1.949.250
Rp6.935 Rp3.467.500
Rp6.238 Rp6.238.000
Rp6.091 Rp15.227.500
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
Rp7.889
Min:
1

Similar Product

Texas Instruments CSD25484F4
Texas Instruments
MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25484F4T

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
P-Channel
1 Channel
20 V
2.5 A
825 mOhms
- 12 V, 12 V
1.2 V
1.09 nC
- 55 C
+ 150 C
500 mW
Enhancement
FemtoFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Fall Time: 8.5 ns
Forward Transconductance - Min: 3.5 S
Product Type: MOSFETs
Rise Time: 5 ns
Series: CSD25484F4
Factory Pack Quantity: 250
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 9.5 ns
Unit Weight: 0,400 mg
Products found:
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Attributes selected: 0

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CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.