CSD25485F5

Texas Instruments
595-CSD25485F5
CSD25485F5

Mfr.:

Description:
MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25485F5T

ECAD Model:
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In Stock: 4.856

Stock:
4.856 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp11.375 Rp11.375
Rp7.082 Rp70.820
Rp4.366 Rp436.600
Rp3.431 Rp1.715.500
Rp3.027 Rp3.027.000
Full Reel (Order in multiples of 3000)
Rp2.605 Rp7.815.000
Rp2.385 Rp14.310.000
Rp2.055 Rp18.495.000
Rp1.981 Rp47.544.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
Rp29.354
Min:
1

Similar Product

Texas Instruments CSD25485F5T
Texas Instruments
MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25485F5

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
P-Channel
1 Channel
20 V
3.2 A
250 mOhms
- 12 V, 12 V
1.3 V
3.5 nC
- 55 C
+ 150 C
1.4 W
Enhancement
PicoStar
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Fall Time: 14 ns
Forward Transconductance - Min: 7 S
Product Type: MOSFETs
Rise Time: 6 ns
Series: CSD25485F5
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 27 ns
Typical Turn-On Delay Time: 14 ns
Unit Weight: 0,700 mg
Products found:
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Attributes selected: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.