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CSD87384MT

Name: Texas Instruments CSD87384MT
Brand: Texas Instruments
SKU: 595-CSD87384MT
Price: 46048 IDR
Availability: InStock

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Mouser No:

595-CSD87384MT

Mfr. No:

CSD87384MT

Mfr.:

Texas Instruments

Description:

MOSFETs Sync Buck NexFET Pwr Block II A 595-CSD8 A 595-CSD87384M

Datasheet:

CSD87384MT Datasheet

ECAD Model:

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Learn more about Texas Instruments CSD87384MT

In Stock: 316

Stock:: 316 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp46.048	Rp46.048
	Rp31.005	Rp310.050
	Rp26.051	Rp2.605.100
Full Reel (Order in multiples of 250)
	Rp26.051	Rp6.512.750
	Rp20.364	Rp10.182.000
	Rp19.630	Rp19.630.000
	Rp19.263	Rp48.157.500
	Rp18.896	Rp94.480.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD87384M

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp30.087

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD87384M

Description:

MOSFETs Sync Buck Power Bloc k II A 595-CSD87384 A 595-CSD87384MT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PTAB-5
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	6.4 mOhms, 1.95 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V, 1.7 V
Qg - Gate Charge:	9.2 nC, 40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	8 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Dual
Fall Time:	7.6 ns, 8.2 ns
Forward Transconductance - Min:	67 S, 240 S
Product Type:	MOSFETs
Rise Time:	56 ns, 49 ns
Series:	CSD87384M
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	14 ns, 29 ns
Typical Turn-On Delay Time:	8.7 ns, 17.5 ns
Unit Weight:	71,600 mg

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CNHTS:: 8541290000
CAHTS:: 8542390000
USHTS:: 8541290065
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.