It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD88599Q5DC

Name: Texas Instruments CSD88599Q5DC
Brand: Texas Instruments
SKU: 595-CSD88599Q5DC
Price: 107324 IDR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

595-CSD88599Q5DC

Mfr. No:

CSD88599Q5DC

Mfr.:

Texas Instruments

Description:

MOSFETs 60-V N channel sync hronous buck NexFET A 595-CSD88599Q5DCT

Datasheet:

CSD88599Q5DC Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Texas Instruments CSD88599Q5DC

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 1.170

Expected 09/07/2026

10.000

5.000

Expected 10/08/2026

5.000

Expected 22/10/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 860

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp107.324	Rp107.324
	Rp71.549	Rp715.490
	Rp51.369	Rp5.136.900
	Rp46.415	Rp23.207.500
Full Reel (Order in multiples of 2500)
	Rp46.415	Rp116.037.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-22
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	1.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Qg - Gate Charge:	43 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	12 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Dual
Fall Time:	3 ns
Product Type:	MOSFETs
Rise Time:	20 ns
Series:	CSD88599Q5DC
Factory Pack Quantity:	2500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	100,600 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

This functionality requires JavaScript to be enabled.

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

CSD88599Q5DC 60V Half-Bridge NexFET Power Block

Texas Instruments CSD88599Q5DC 60V Half-Bridge NexFET Power Block is an optimized design for high-current motor control applications. These applications include handheld, cordless garden, and power tools. The CSD88599Q5DC utilizes TI’s patented stacked die technology to minimize parasitic inductances while offering a complete half-bridge. The device comes in a space-saving thermally enhanced DualCool™ 5mm × 6mm package. With an exposed metal top, this power block device allows for a simple heat sink application to draw heat out through the top of the package and away from the PCB. This design allows for superior thermal performance at the higher currents demanded by many motor control applications.