DRV8300DPWR

Texas Instruments
595-DRV8300DPWR
DRV8300DPWR

Mfr.:

Description:
Gate Drivers 100-V max simple 3-p hase gate driver wi

ECAD Model:
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In Stock: 8.725

Stock:
8.725 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp19.997 Rp19.997
Rp14.457 Rp144.570
Rp13.062 Rp326.550
Rp11.521 Rp1.152.100
Rp10.787 Rp2.696.750
Rp9.962 Rp4.981.000
Rp9.045 Rp9.045.000
Full Reel (Order in multiples of 3000)
Rp8.623 Rp25.869.000
Rp7.265 Rp43.590.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
TSSOP-20
3 Driver
6 Output
750 mA
5 V
20 V
Non-Inverting
24 ns
12 ns
- 40 C
+ 125 C
DRV8300
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Development Kit: DRV8300DIPW-EVM
Logic Type: CMOS
Moisture Sensitive: Yes
Product Type: Gate Drivers
Propagation Delay - Max: 180 ns
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

DRV8300/DRV8300-Q1 3-Phase Gate Drivers

Texas Instruments DRV8300/DRV8300-Q1 3-Phase Gate Drivers provide three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D/DRV8300D-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Texas Instruments DRV8300/DRV8300-Q1 gate drive architecture supports peak up to 750mA source and 1.5A sink currents.