DRV8300DPWR

Texas Instruments
595-DRV8300DPWR
DRV8300DPWR

Mfr.:

Description:
Gate Drivers 100-V max simple 3-p hase gate driver wi

ECAD Model:
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In Stock: 7.760

Stock:
7.760 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp17.796 Rp17.796
Rp12.457 Rp124.570
Rp11.173 Rp279.325
Rp9.760 Rp976.000
Rp9.081 Rp2.270.250
Rp8.678 Rp4.339.000
Rp8.347 Rp8.347.000
Full Reel (Order in multiples of 3000)
Rp7.981 Rp23.943.000
Rp7.760 Rp46.560.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
TSSOP-20
3 Driver
6 Output
750 mA
5 V
20 V
Non-Inverting
24 ns
12 ns
- 40 C
+ 125 C
DRV8300
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Development Kit: DRV8300DIPW-EVM
Logic Type: CMOS
Moisture Sensitive: Yes
Product Type: Gate Drivers
Propagation Delay - Max: 180 ns
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
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Compliance Codes
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

DRV8300/DRV8300-Q1 3-Phase Gate Drivers

Texas Instruments DRV8300/DRV8300-Q1 3-Phase Gate Drivers provide three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D/DRV8300D-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Texas Instruments DRV8300/DRV8300-Q1 gate drive architecture supports peak up to 750mA source and 1.5A sink currents.