LM2105DR

Texas Instruments
595-LM2105DR
LM2105DR

Mfr.:

Description:
Gate Drivers 107-V 0.5-A/0.8-A ha lf-bridge gate driv

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 3.301

Stock:
3.301 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp17.245 Rp17.245
Rp12.384 Rp123.840
Rp11.154 Rp278.850
Rp9.815 Rp981.500
Rp9.173 Rp2.293.250
Rp8.788 Rp4.394.000
Rp8.513 Rp8.513.000
Full Reel (Order in multiples of 3000)
Rp8.072 Rp24.216.000
Rp7.760 Rp46.560.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
Half-Bridge
SMD/SMT
SOIC-8
1 Driver
1 Output
5 V
18 V
28 ns
18 ns
- 40 C
+ 125 C
LM2105
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Logic Type: CMOS, TTL
Operating Supply Current: 560 uA
Product Type: Gate Drivers
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

Compliance Codes
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Malaysia
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

LM2105 Half-Bridge Gate Driver

Texas Instruments LM2105 Half-Bridge Gate Driver is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The integrated bootstrap diode saves board space and reduces system costs by eliminating the need for an external discrete diode.