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LMG1025QDRVRQ1

Name: Texas Instruments LMG1025QDRVRQ1
Brand: Texas Instruments
SKU: 595-LMG1025QDRVRQ1
Price: 126037 IDR
Availability: OutOfStock

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Mouser No:

595-LMG1025QDRVRQ1

Mfr. No:

LMG1025QDRVRQ1

Mfr.:

Texas Instruments

Description:

Gate Drivers Automotive 7-A/5-A s ingle-channel low-s

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

LMG1025QDRVRQ1 Datasheet

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 12 Weeks Estimated factory production time.

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Minimum: 3000 Multiples: 3000

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	Rp126.037	Rp378.111.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Type:	Low-Side
Mounting Style:	SMD/SMT
Package/Case:	WSON-6
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	7 A
Supply Voltage - Min:	4.75 V
Supply Voltage - Max:	5.25 V
Configuration:	Inverting, Non-Inverting
Rise Time:	650 ps
Fall Time:	850 ps
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG1025-Q1
Packaging:	Reel
Brand:	Texas Instruments
Features:	Automotive
Input Voltage - Max:	5.25 V
Input Voltage - Min:	4.75 V
Operating Supply Current:	51 mA
Product Type:	Gate Drivers
Propagation Delay - Max:	4.4 ns
Shutdown:	Shutdown
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

LMG1025QDRVRQ1 Datasheet

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Compliance Codes

USHTS:: 8542390090
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

LMG1025/LMG1025-Q1 Half-Bridge GaN Driver

The Texas Instruments LMG1025/LMG1025-Q1 Half-Bridge GaN Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs, for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique. It is internally clamped at 5V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement-mode GaN FETs. The inputs of the LMG1205/LMG1025-Q1 are TTL logic compatible and can withstand input voltages up to 14V, regardless of the VDD voltage. The LMG1205/LMG1205-Q1 has split-gate outputs, providing the required flexibility to independently adjust the turn-on and turn-off strength.