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LMG3100R044VBER

Name: Texas Instruments LMG3100R044VBER
Brand: Texas Instruments
SKU: 595-LMG3100R044VBER
Price: 157959 IDR
Availability: InStock

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Mouser No:

595-LMG3100R044VBER

Mfr. No:

LMG3100R044VBER

Mfr.:

Texas Instruments

Description:

Gate Drivers 100V 4.4mohm GaN FET with integrated dri

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

LMG3100R044VBER Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments LMG3100R044VBER

In Stock: 1.957

Stock:: 1.957 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1 Maximum: 25

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp157.959	Rp157.959
	Rp115.029	Rp1.150.290
	Rp110.443	Rp2.761.075
Full Reel (Order in multiples of 2500)
	Rp110.443	Rp276.107.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	Gate Drivers
Mounting Style:	SMD/SMT
Package/Case:	VQFN-15
Number of Outputs:	1 Output
Supply Voltage - Min:	4.75 V
Supply Voltage - Max:	5.25 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3100R044
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Development Kit:	LMG3100EVM-089
Input Voltage - Max:	5.25 V
Input Voltage - Min:	4.75 V
Moisture Sensitive:	Yes
Operating Supply Current:	35 A
Product Type:	Gate Drivers
Propagation Delay - Max:	70 ns
Rds On - Drain-Source Resistance:	4.4 mOhms
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

LMG3100R044VBER Datasheet

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Compliance Codes

CNHTS:: 8542391090
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

LMG3100R0x GaN FETs with Integrated Drivers

Texas Instruments LMG3100R0x Gallium Nitride (GaN) FETs with Integrated Drivers are 1.7mΩ GaN FETs and drivers with a high-side level shifter and bootstrap. Two LGM3100 devices can be used to form a half-bridge with no external level shifter required. The GaN FET and driver components feature built-in supply rail under-voltage lock-out (UVLO) protection and internal bootstrap supply voltage clamping capability to prevent overdrive (>5.4V). Texas Instruments LMG3100R0x offers low power consumption and an improved user interface. The LMG3100R017 is an ideal solution for high-frequency, high-efficiency applications, including buck-boost converters, LLC converters, solar inverters, telecom, motor drives, power tools, and Class D audio amplifiers.