LMG3411R070RWHT

Texas Instruments
595-LMG3411R070RWHT
LMG3411R070RWHT

Mfr.:

Description:
Gate Drivers 600-V 70-m? GaN with integrated driver a A 595-LMG3411R070RWHR

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 236

Stock:
236 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 236 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp371.507 Rp371.507
Rp296.471 Rp2.964.710
Rp277.758 Rp6.943.950
Rp257.211 Rp25.721.100
Full Reel (Order in multiples of 250)
Rp246.570 Rp61.642.500
Rp238.681 Rp119.340.500
1.000 Quote
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
REACH - SVHC:
MOSFET Gate Drivers
Half-Bridge
SMD/SMT
QFN-32
1 Driver
1 Output
12 A
9.5 V
18 V
Non-Inverting
2.9 ns
26 ns
- 40 C
+ 125 C
LMG3411R070
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Maximum Turn-Off Delay Time: 10 ns
Maximum Turn-On Delay Time: 12 ns
Moisture Sensitive: Yes
Operating Supply Current: 43 mA
Output Voltage: 5 V
Product Type: Gate Drivers
Propagation Delay - Max: 36 ns
Rds On - Drain-Source Resistance: 70 mOhms
Factory Pack Quantity: 250
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: GaN
Unit Weight: 188,200 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CNHTS:
8542399000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

LMG3410R070 600V 70mΩ GaN Power Stage

Texas Instruments LMG3410R070 600V 70mΩ GaN Power Stage with integrated driver and protection offers advantages over silicon MOSFETs. These include ultra-low input and output capacitance. Features include zero reverse recovery, reducing switching losses by as much as 80%, and low switch node ringing to decrease EMI.