LMG5200MOFR

Texas Instruments
595-LMG5200MOFR
LMG5200MOFR

Mfr.:

Description:
Gate Drivers 80V GaN Half Bridge Power Stage 9-QFM -4 A 595-LMG5200MOFT

Datasheet:
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Learn more about Texas Instruments LMG5200MOFR

In Stock: 11

Stock:
11
Can Dispatch Immediately
On Order:
2.000
Expected 08/06/2026
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp239.232 Rp239.232
Rp188.230 Rp1.882.300
Rp175.388 Rp4.384.700
Rp161.445 Rp16.144.500
Rp160.711 Rp40.177.750
Rp155.391 Rp77.695.500
Rp153.556 Rp153.556.000
Full Reel (Order in multiples of 2000)
Rp141.815 Rp283.630.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
QFM-9
1 Driver
1 Output
10 A
4.75 V
5.25 V
- 40 C
+ 125 C
LMG5200
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Moisture Sensitive: Yes
Operating Supply Current: 3 mA
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 15 Ohms
Factory Pack Quantity: 2000
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: GaN
Unit Weight: 2,338 g
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Compliance Codes
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Taiwan
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

LMG5200 80V GaN Half-Bridge Power Stage

Texas Instruments LMG5200 80V GaN Half-Bridge Power Stage provides an integrated power stage solution using enhancement-mode gallium nitride (GaN) FETs. The device consists of two 80V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond wire-free package platform with minimised package parasitic elements. The TTL logic-compatible inputs can withstand input voltages of up to 12V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

Gallium Nitride (GaN)

Texas Instruments Gallium Nitride (GaN) solutions deliver high efficiency, power density, and reliability. The Texas Instruments GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.

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