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TPS28226DRBR

Name: Texas Instruments TPS28226DRBR
Brand: Texas Instruments
SKU: 595-TPS28226DRBR
Price: 14218 IDR
Availability: OutOfStock

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Mouser No:

595-TPS28226DRBR

Mfr. No:

TPS28226DRBR

Mfr.:

Texas Instruments

Description:

Gate Drivers Hi Fre 4A Sink Synch MOSFET Driver A 595 A 595-TPS28226DRBT

Datasheet:

TPS28226DRBR Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments TPS28226DRBR

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 6 Weeks Estimated factory production time.

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Minimum: 3000 Multiples: 3000

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	Rp14.218	Rp42.654.000
	Rp13.558	Rp81.348.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	SON-8
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Output Current:	6 A
Supply Voltage - Min:	4 V
Supply Voltage - Max:	8.8 V
Rise Time:	10 ns
Fall Time:	5 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	TPS28226
Packaging:	Reel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Features:	Synchronous Rectification
Maximum Turn-Off Delay Time:	14 ns
Moisture Sensitive:	Yes
Pd - Power Dissipation:	2.58 W
Product Type:	Gate Drivers
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Unit Weight:	24 mg

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Power Management Guide 2018 (Rev. R)

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CNHTS:: 8542319090
CAHTS:: 8542390000
USHTS:: 8542390090
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

TPS28226 8-Pin Sink Synchronous MOSFET Drivers

Texas Instruments TPS28226 8-Pin High-Frequency 4A Sink Synchronous MOSFET Drivers is optimized for a variety of high-current one and multi-phase DC-to-DC converters. The Texas Instruments TPS28226 MOSFET Drivers have a small-size and low EMI emissions, providing a high-efficiency solution. Efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays, and high-current 2A source with 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold. This feature ensures no shoot-through current at high dV/dt phase node transitions. Charged by an internal diode, the bootstrap capacitor allows the use of N-channel MOSFETs in a half-bridge configuration.