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UCC5870QDWJQ1

Name: Texas Instruments UCC5870QDWJQ1
Brand: Texas Instruments
SKU: 595-UCC5870QDWJQ1
Price: 359398 IDR
Availability: InStock

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See Product Specifications

Mouser No:

595-UCC5870QDWJQ1

Mfr. No:

UCC5870QDWJQ1

Mfr.:

Texas Instruments

Description:

Galvanically Isolated Gate Drivers Automotive 3.75kVrm s 30A single-channel A 595-UCC5870QDWJRQ1

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

UCC5870QDWJQ1 Datasheet

ECAD Model:

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In Stock: 1.797

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp359.398	Rp359.398
	Rp284.913	Rp2.849.130
	Rp266.200	Rp6.655.000
	Rp245.653	Rp27.267.483
	Rp234.278	Rp60.678.002
	Rp230.059	Rp119.170.562

Alternative Packaging

Mfr. Part No.:

UCC5870QDWJRQ1

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp304.911

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Galvanically Isolated Gate Drivers
RoHS:
Series:	UCC5870
Mounting Style:	SMD/SMT
Package/Case:	SSOP-36
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Pd - Power Dissipation:	500 mW
Propagation Delay - Max:	150 ns
Rise Time:	150 ns
Fall Time:	150 ns
Packaging:	Tube
Brand:	Texas Instruments
Configuration:	Inverting
Moisture Sensitive:	Yes
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	30 A
Output Voltage:	15 V to 30 V
Product:	IGBT, MOSFET Gate Drivers
Product Type:	Galvanically Isolated Gate Drivers
Shutdown:	Shutdown
Factory Pack Quantity:	37
Subcategory:	PMIC - Power Management ICs
Supply Voltage - Max:	5.5 V
Supply Voltage - Min:	3 V
Technology:	SiC

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Compliance Codes

CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

UCC5870-Q1 IGBT/SiC MOSFET Gate Driver

Texas Instruments UCC5870-Q1 IGBT/SiC MOSFET Gate Driver is a functional safety compliant, isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections such as shunt resistor based over-current, NTC based over-temperature, and DESAT detection, including selectable soft turn off or two-level turn off during these faults. To further reduce the application size, the Texas Instruments UCC5870-Q1 integrates a 4A active Miller clamp during switching and an active gate pull-down while the driver is unpowered. An integrated 10-bit ADC enables monitoring up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.