SSM6P816R,LF

Toshiba
757-SSM6P816RLF
SSM6P816R,LF

Mfr.:

Description:
MOSFETs MOSFET, DUAL P-CH, 20V, 6A, TSOP-F

ECAD Model:
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In Stock: 11.955

Stock:
11.955 Can Dispatch Immediately
Factory Lead Time:
5 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp14.677 Rp14.677
Rp9.136 Rp91.360
Rp5.907 Rp590.700
Rp4.495 Rp2.247.500
Rp4.054 Rp4.054.000
Full Reel (Order in multiples of 3000)
Rp3.981 Rp11.943.000
Rp3.449 Rp20.694.000
Rp3.174 Rp28.566.000
Rp2.880 Rp69.120.000

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Reel
Cut Tape
Brand: Toshiba
Product Type: MOSFETs
Factory Pack Quantity: 3000
Subcategory: Transistors
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SSM6x N- & P-Channel MOSFETs

Toshiba SSM6x N- and P-Channel MOSFETs with high-speed switching operate as both power management and analog switches. These MOSFETs provide very low on-resistance (as low as 1.1mΩ to a 115mΩ maximum) for different gate-to-source voltage ranges. The SSM6x MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance, operate as DC-to-DC converters, and drive a 1.2V to 4.5V gate voltage. The Toshiba SSM6x MOSFETs deliver less drain power dissipation (up to 150mW), producing less heat while operating within a 12V to 100V input voltage range.