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TK080U60Z1,RQ

Name: Toshiba TK080U60Z1,RQ
Brand: Toshiba
SKU: 757-TK080U60Z1RQ
Price: 92831 IDR
Availability: InStock

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See Product Specifications

Mouser No:

757-TK080U60Z1RQ

Mfr. No:

TK080U60Z1,RQ

Mfr.:

Toshiba

Description:

MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK080U60Z1,RQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TK080U60Z1,RQ

In Stock: 1.998

Stock:: 1.998 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp92.831	Rp92.831
	Rp61.643	Rp616.430
	Rp44.030	Rp4.403.000
	Rp41.829	Rp20.914.500
Full Reel (Order in multiples of 2000)
	Rp34.124	Rp68.248.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TOLL-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	43 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	211 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	20 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	93 ns
Typical Turn-On Delay Time:	50 ns

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Datasheet

TK080U60Z1,RQ Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.