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TK4P60D,RQ

Name: Toshiba TK4P60D,RQ
Brand: Toshiba
SKU: 757-TK4P60DRQ
Price: 22382 IDR
Availability: InStock

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Mouser No:

757-TK4P60DRQ

Mfr. No:

TK4P60D,RQ

Mfr.:

Toshiba

Description:

MOSFETs Pb-F POWER MOSFET TRANSISTOR DP(OS) MOQ=2000 V=600 PD=80W F=1MHZ

Datasheet:

TK4P60D,RQ Datasheet (PDF)

ECAD Model:

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More Information

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In Stock: 1.754

Stock:: 1.754 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp22.382	Rp22.382
	Rp14.879	Rp148.790
	Rp9.852	Rp985.200
	Rp8.311	Rp4.155.500
Full Reel (Order in multiples of 2000)
	Rp6.861	Rp13.722.000
	Rp6.641	Rp26.564.000
	Rp6.605	Rp66.050.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	1.7 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	12 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Tradename:	MOSVII
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	0.7 S
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	TK4P60D
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	55 ns
Typical Turn-On Delay Time:	40 ns
Unit Weight:	360 mg

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Datasheet

TK4P60D,RQ Datasheet (PDF)

Application Notes

Models

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Test/Quality Data

Reliability Tests Report

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and R_DS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.