TLP352(D4-TP1,F)

Toshiba
757-TLP352D4TP1F
TLP352(D4-TP1,F)

Mfr.:

Description:
Optically Isolated Gate Drivers Photocoupler, Photo IC Output

ECAD Model:
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In Stock: 2.203

Stock:
2.203 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp33.206 Rp33.206
Rp23.850 Rp238.500
Rp17.997 Rp1.799.700
Rp17.961 Rp4.490.250
Rp15.466 Rp7.733.000
Rp12.842 Rp12.842.000
Full Reel (Order in multiples of 1500)
Rp12.842 Rp19.263.000
Rp12.824 Rp38.472.000
Rp12.549 Rp94.117.500

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: Optically Isolated Gate Drivers
RoHS:  
SMD/SMT
DIP-8 SMD
1 Channel
1.55 V
5 V
20 mA
3750 Vrms
- 40 C
+ 125 C
260 mW
200 ns
15 ns
8 ns
Reel
Cut Tape
Brand: Toshiba
Product Type: Optically Isolated Gate Drivers
Factory Pack Quantity: 1500
Subcategory: Optocouplers
Type: Photocoupler
Unit Weight: 540 mg
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CNHTS:
8541490000
CAHTS:
8541490020
USHTS:
8541498000
KRHTS:
8541409029
TARIC:
8541409090
ECCN:
EAR99

Optocouplers

Toshiba Optocouplers are used for a variety of applications, ranging from industrial equipment to home appliances and equipment. This comprehensive optocoupler lineup from Toshiba consists of a module that features a high-power infrared LED coupled with a photodetector. These photocouplers are certified for major international safety standards and provide high isolation voltage, and low-power consumption. This makes them ideal for applications that require enhanced safety and environmental friendliness.

TLP152/352 IGBT/MOSFET Gate Drive Photocouplers

Toshiba TLP152/352 IGBT/MOSFET Gate Drive Photocouplers consist of a GaAℓAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. Each of these has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 20kV/μs. They have a totem-pole output that can both sink and source current. These devices are ideal for IGBT and power MOSFET gate drivers.