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SIDR668ADP-T1-RE3

Name: Vishay SIDR668ADP-T1-RE3
Brand: Vishay Semiconductors
SKU: 78-SIDR668ADP-T1-RE3
Price: 57606 IDR
Availability: InStock

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Mouser No:

78-SIDR668ADP-T1-RE3

Mfr. No:

SIDR668ADP-T1-RE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs N-Channel 100 V (D-S) MOSFET, PowerPAK SO-8DC

Datasheet:

SIDR668ADP-T1-RE3 Datasheet

ECAD Model:

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In Stock: 20.267

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp57.606	Rp57.606
	Rp38.160	Rp381.600
	Rp26.602	Rp2.660.200
	Rp22.566	Rp11.283.000
Full Reel (Order in multiples of 3000)
	Rp19.080	Rp57.240.000
	Rp18.713	Rp112.278.000
24.000	Quote

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8DC
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	104 A
Rds On - Drain-Source Resistance:	4.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	85 S
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	SIDR
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	21 ns
Unit Weight:	750 mg

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Datasheet

SIDR668ADP-T1-RE3 Datasheet

PCN

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs

Vishay TrenchFET^® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK^® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET^® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK^® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low R_DS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK^® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.