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SIHK100N65E-T1-GE3

Name: Vishay SIHK100N65E-T1-GE3
Brand: Vishay
SKU: 78-SIHK100N65ET1-GE3
Price: 171168 IDR
Availability: InStock

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Mouser No:

78-SIHK100N65ET1-GE3

Mfr. No:

SIHK100N65E-T1-GE3

Mfr.:

Vishay

Description:

MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SIHK100N65E-T1-GE3 Datasheet

ECAD Model:

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More Information

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In Stock: 1.730

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp171.168	Rp171.168
	Rp117.598	Rp1.175.980
	Rp94.482	Rp9.448.200
Full Reel (Order in multiples of 2000)
	Rp77.053	Rp154.106.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-10x12
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	28 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	41 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	184 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay
Configuration:	Single
Fall Time:	32 ns
Forward Transconductance - Min:	12 S
Product Type:	MOSFETs
Rise Time:	68 ns
Series:	SIHK E
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	N-Channel Power MOSFET
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	28 ns

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Datasheet

SIHK100N65E-T1-GE3 Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET® Gen V Power MOSFETs with VDS

Vishay / Siliconix TrenchFET^® Gen V Power MOSFETs increase power conversion efficiency with a very low R_DS x Q_g figure-of-merit (FOM). The Gen V Power MOSFETs have 80V, 100V, and 150V drain-source breakdown voltage options. The Gen V Power MOSFETs are available in a PowerPAK^® 1212-8SH or PowerPAK SO-8 single package.

Superjunction MOSFETs in PowerPAK® 10 x 12

Vishay / Siliconix Superjunction MOSFETs in PowerPAK^® 10 x 12 packaging feature power technology. These power MOSFETs optimize power efficiency, while the R_DS(on) minimizes power loss during conduction, ensuring efficient operation. These components are 100% Rg and UIS tested. Vishay / Siliconix Superjunction MOSFETs enhance power dissipation and lower thermal resistance (R_thJC). Typical applications include synchronous rectification, automation, and power supplies.