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SIHP100N65E-GE3

Name: Vishay SIHP100N65E-GE3
Brand: Vishay
SKU: 78-SIHP100N65E-GE3
Price: 180892 IDR
Availability: InStock

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Mouser No:

78-SIHP100N65E-GE3

Mfr. No:

SIHP100N65E-GE3

Mfr.:

Vishay

Description:

MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SIHP100N65E-GE3 Datasheet

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In Stock: 900

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp180.892	Rp180.892
	Rp137.228	Rp1.372.280
	Rp114.296	Rp11.429.600
	Rp106.774	Rp53.387.000
	Rp90.813	Rp90.813.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	41 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	208 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Vishay
Configuration:	Single
Fall Time:	32 ns
Forward Transconductance - Min:	12 S
Product Type:	MOSFETs
Rise Time:	68 ns
Series:	SIHP E
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	N-Channel Power MOSFET
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	28 ns

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Datasheet

SIHP100N65E-GE3 Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET® Gen V Power MOSFETs with VDS

Vishay / Siliconix TrenchFET^® Gen V Power MOSFETs increase power conversion efficiency with a very low R_DS x Q_g figure-of-merit (FOM). The Gen V Power MOSFETs have 80V, 100V, and 150V drain-source breakdown voltage options. The Gen V Power MOSFETs are available in a PowerPAK^® 1212-8SH or PowerPAK SO-8 single package.