FDMT800120DC

onsemi
512-FDMT800120DC
FDMT800120DC

Mfr.:

Description:
MOSFETs 120V NChnl Dual Cool PowerTrench MOSFET

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
3.000
Expected 09/03/2026
Factory Lead Time:
19
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp132.275 Rp132.275
Rp92.280 Rp922.800
Rp75.035 Rp7.503.500
Rp70.632 Rp70.632.000
Full Reel (Order in multiples of 3000)
Rp61.276 Rp183.828.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DualCool-88-8
N-Channel
1 Channel
120 V
129 A
4.14 mOhms
- 20 V, 20 V
3.1 V
76 nC
- 55 C
+ 150 C
156 W
Enhancement
PowerTrench
Reel
Cut Tape
MouseReel
Brand: onsemi
Configuration: Single
Fall Time: 19 ns
Forward Transconductance - Min: 69 S
Product Type: MOSFETs
Rise Time: 18 ns
Series: FDMT800120DC
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-channel
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 29 ns
Unit Weight: 248,520 mg
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.