N01S830BAT22I

onsemi
863-N01S830BAT22I
N01S830BAT22I

Mfr.:

Description:
SRAM 1MB 3V BATT BU FUNCT

ECAD Model:
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In Stock: 1.535

Stock:
1.535 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp72.650 Rp72.650
Rp70.265 Rp702.650
Rp66.046 Rp1.320.920
Rp60.909 Rp3.045.450
Rp59.625 Rp5.962.500
Rp57.423 Rp11.484.600
Rp56.873 Rp28.436.500

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
Rp98.518
Min:
1

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SRAM
RoHS:  
1 Mbit
128 k x 8
25 ns
20 MHz
SPI
5.5 V
2.5 V
20 mA
- 40 C
+ 85 C
SMD/SMT
TSSOP-8
Tube
Brand: onsemi
Memory Type: SDR
Moisture Sensitive: Yes
Product Type: SRAM
Series: N01S830
Factory Pack Quantity: 100
Subcategory: Memory & Data Storage
Type: Synchronous
Unit Weight: 400 mg
Products found:
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Attributes selected: 0

CNHTS:
8542329000
CAHTS:
8542390000
USHTS:
8542320041
TARIC:
8542324500
MXHTS:
8542399901
ECCN:
EAR99

N01S8 1Mb Ultra-Low Power Serial SRAM

onsemi N01S8x 1Mb Ultra-Low Power Serial SRAM offers high-speed performance and low power. onsemi N01S8x SRAM operates with a single chip select (CS) input and uses a simple SPI protocol. In SPI mode, a single data-in (SI) and data-out (SO) line is used along with the clock (SCK) to access data within these devices. In DUAL mode, two multiplexed data-in/data-out (SIO0-SIO1) lines are used. In QUAD mode, four multiplexed data-in/data-out (SIO0-SIO3) lines are used with the clock to access the memory. N01S8x SRAM operates over a wide temperature range of -40°C to +85°C and is offered in a 8-lead TSSOP package.