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NTH4L040N120SC1

Name: onsemi NTH4L040N120SC1
Brand: onsemi
SKU: 863-NTH4L040N120SC1
Price: 324174 IDR
Availability: InStock

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Mouser No:

863-NTH4L040N120SC1

Mfr. No:

NTH4L040N120SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 40MOHM 1200V

Datasheet:

NTH4L040N120SC1 Datasheet

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In Stock: 1.511

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp324.174	Rp324.174
	Rp247.854	Rp2.478.540
	Rp234.278	Rp23.427.800
	Rp234.095	Rp105.342.750
10.350	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	58 A
Rds On - Drain-Source Resistance:	56 mOhms
Vgs - Gate-Source Voltage:	- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	106 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	319 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	20 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	20 ns
Series:	NTH4L040N120SC1
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	17 ns

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Datasheet

NTH4L040N120SC1 Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.