NXH008P120M3F1PTG

onsemi
863-NXH008P12M3F1PTG
NXH008P120M3F1PTG

Mfr.:

Description:
MOSFET Modules 8M OHM 1200V 40A M3S SIC HALF BRIDGE MODULE

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 36

Stock:
36 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp1.816.988 Rp1.816.988
Rp1.804.696 Rp18.046.960
Rp1.713.333 Rp191.893.296

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
PIM-18
N-Channel
1 Channel
1.2 kV
145 A
10.9 mOhms
- 10 V, + 22 V
4.4 V
- 40 C
+ 175 C
382 W
NXH008P120M3F1PTG
Tray
Brand: onsemi
Configuration: Single
Fall Time: 12 ns
Height: 12 mm
Length: 48 mm
Product Type: MOSFET Modules
Rise Time: 17 ns
Factory Pack Quantity: 28
Subcategory: Discrete and Power Modules
Tradename: EliteSiC
Type: Half Bridge
Typical Delay Time: 17 ns
Typical Turn-Off Delay Time: 97 ns
Typical Turn-On Delay Time: 17 ns
Width: 33.8 mm
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Attributes selected: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

NXH0xxP120M3F1 Silicone Carbide (SiC) Modules

onsemi NXH0xxP120M3F1 Silicone Carbide (SiC) Modules contain 8mΩ/1200V, 10mΩ/1200V, 15mΩ/1200V, and 30mΩ/1200V M3S SiC MOSFETs based on half-bridge topology and a thermistor in a F1 package. These modules feature pre-applied Thermal Interface Material (TIM) and without pre-applied TIM. The NXH0xxP120M3F1 modules are designed with press-fit pins and are Pb-free, Halide-free, and RoHS-compliant. These power modules are used in solar inverters, industrial power, Electric Vehicle (EV) charging stations, and Uninterruptible Power Supplies (UPS).