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BSM080D12P2C008

Name: ROHM Semiconductor BSM080D12P2C008
Brand: ROHM Semiconductor
SKU: 755-BSM080D12P2C008
Price: 5847604 IDR
Availability: OutOfStock

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Mouser No:

755-BSM080D12P2C008

Mfr. No:

BSM080D12P2C008

Mfr.:

ROHM Semiconductor

Description:

Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V

Datasheet:

BSM080D12P2C008 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	SiC MOSFET-SiC SBD Modules
Type:	Half Bridge
Technology:	SiC
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 6 V, + 22 V
Mounting Style:	Screw Mount
Package/Case:	Module
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Series:	BSMx
Packaging:	Tray
Brand:	ROHM Semiconductor
Configuration:	Half Bridge
Fall Time:	40 ns
Id - Continuous Drain Current:	80 A
Pd - Power Dissipation:	600 W
Product Type:	Discrete Semiconductor Modules
Rise Time:	30 ns
Factory Pack Quantity:	12
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	20 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	1.6 V

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Datasheet

BSM080D12P2C008 Datasheet (PDF)

Models

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Specification Sheets

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Technical Resources

Test/Quality Data

Constitution Material (PDF)

Compliance Codes

CNHTS:: 8504409100
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.