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BSM180D12P3C007

Name: ROHM Semiconductor BSM180D12P3C007
Brand: ROHM Semiconductor
SKU: 755-BSM180D12P3C007
Price: 11810054 IDR
Availability: InStock

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Mouser No:

755-BSM180D12P3C007

Mfr. No:

BSM180D12P3C007

Mfr.:

ROHM Semiconductor

Description:

MOSFET Modules Half Bridge Module SiC UMOSFET & SBD

Datasheet:

BSM180D12P3C007 Datasheet (PDF)

ECAD Model:

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Learn more about ROHM Semiconductor BSM180D12P3C007

In Stock: 12

Stock:: 12 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 12 will be subject to minimum order requirements.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp11.810.054	Rp11.810.054

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	Module
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	180 A
Vgs - Gate-Source Voltage:	- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	880 W
Series:	BSMx
Packaging:	Tray
Brand:	ROHM Semiconductor
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	50 ns
Height:	21.1 mm
Length:	122 mm
Product Type:	MOSFET Modules
Rise Time:	70 ns
Factory Pack Quantity:	12
Subcategory:	Discrete and Power Modules
Type:	SiC Power Module
Typical Turn-Off Delay Time:	165 ns
Typical Turn-On Delay Time:	50 ns
Vr - Reverse Voltage:	1.2 kV
Width:	45.6 mm
Unit Weight:	302,171 g

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Datasheet

BSM180D12P3C007 Datasheet (PDF)

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Constitution Material (PDF)

CNHTS:: 8504901900
USHTS:: 8541590080
TARIC:: 8541500000
MXHTS:: 85415001
BRHTS:: 85415020
ECCN:: EAR99

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.