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BSM250D17P2E004

Name: ROHM Semiconductor BSM250D17P2E004
Brand: ROHM Semiconductor
SKU: 755-BSM250D17P2E004
Price: 20631545 IDR
Availability: InStock

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Mouser No:

755-BSM250D17P2E004

Mfr. No:

BSM250D17P2E004

Mfr.:

ROHM Semiconductor

Description:

MOSFET Modules 1700V Vdss; 250A Id SiC Pwr Module

Datasheet:

BSM250D17P2E004 Datasheet (PDF)

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In Stock: 48

Stock:: 48 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp20.631.545	Rp20.631.545
Full Reel (Order in multiples of 4)
	Rp20.631.545	Rp82.526.180

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	Module
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	250 A
Vgs - Gate-Source Voltage:	- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.8 kW
Series:	BSMx
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	70 ns
Height:	15.4 mm
Length:	152 mm
Product Type:	MOSFET Modules
Rise Time:	55 ns
Factory Pack Quantity:	4
Subcategory:	Discrete and Power Modules
Type:	SiC Power Module
Typical Turn-Off Delay Time:	195 ns
Typical Turn-On Delay Time:	55 ns
Vr - Reverse Voltage:	1.2 kV
Width:	62 mm
Unit Weight:	431 g

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BSM250D17P2E004 Datasheet (PDF)

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CNHTS:: 8504409100
CAHTS:: 8541590000
USHTS:: 8541590080
JPHTS:: 854159000
TARIC:: 8541590000
MXHTS:: 8541500100
ECCN:: EAR99

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.