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BSM300C12P3E201

Name: ROHM Semiconductor BSM300C12P3E201
Brand: ROHM Semiconductor
SKU: 755-BSM300C12P3E201
Price: 13114822 IDR
Availability: InStock

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Mouser No:

755-BSM300C12P3E201

Mfr. No:

BSM300C12P3E201

Mfr.:

ROHM Semiconductor

Description:

MOSFET Modules 1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET

Datasheet:

BSM300C12P3E201 Datasheet (PDF)

ECAD Model:

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Learn more about ROHM Semiconductor BSM300C12P3E201

In Stock: 4

Stock:: 4 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 4 will be subject to minimum order requirements.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp13.114.822	Rp13.114.822

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	Module
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	300 A
Vgs - Gate-Source Voltage:	- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.36 kW
Packaging:	Bulk
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	40 ns
Height:	15.4 mm
If - Forward Current:	300 A
Length:	152 mm
Product Type:	MOSFET Modules
Rise Time:	35 ns
Factory Pack Quantity:	4
Subcategory:	Discrete and Power Modules
Type:	SiC Power Module
Typical Turn-Off Delay Time:	155 ns
Typical Turn-On Delay Time:	40 ns
Vf - Forward Voltage:	1.6 V
Vr - Reverse Voltage:	1.2 kV
Width:	62 mm
Unit Weight:	615,801 g

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BSM300C12P3E201 Datasheet (PDF)

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CNHTS:: 8504409190
USHTS:: 8541590080
ECCN:: EAR99

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.