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BSM600D12P4G103

Name: ROHM Semiconductor BSM600D12P4G103
Brand: ROHM Semiconductor
SKU: 755-BSM600D12P4G103
Price: 21566273 IDR
Availability: InStock

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Mouser No:

755-BSM600D12P4G103

Mfr. No:

BSM600D12P4G103

Mfr.:

ROHM Semiconductor

Description:

MOSFET Modules 1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET

Datasheet:

BSM600D12P4G103 Datasheet (PDF)

ECAD Model:

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In Stock: 4

Stock:: 4 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp21.566.273	Rp21.566.273

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	Module
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	567 A
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.78 kW
Packaging:	Bulk
Brand:	ROHM Semiconductor
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	90 ns
Length:	152 mm
Product Type:	MOSFET Modules
Rise Time:	110 ns
Factory Pack Quantity:	4
Subcategory:	Discrete and Power Modules
Type:	SiC Power Module
Typical Turn-Off Delay Time:	435 ns
Typical Turn-On Delay Time:	135 ns
Vr - Reverse Voltage:	1.2 kV
Width:	62 mm

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Datasheet

BSM600D12P4G103 Datasheet (PDF)

Specification Sheets

Datasheet - Chinese (English language)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.