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CDF56G6511N TR13 PBFREE

Name: Central Semiconductor CDF56G6511N TR13 PBFREE
Brand: Central Semiconductor
SKU: 610-CDF56G6511NTR13P
Price: 113195 IDR
Availability: InStock

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Mouser No:

610-CDF56G6511NTR13P

Mfr. No:

CDF56G6511N TR13 PBFREE

Mfr.:

Central Semiconductor

Description:

GaN FETs 650V, 11A, N-Channel GaN FET

Datasheet:

CDF56G6511N TR13 PBFREE Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Central Semiconductor CDF56G6511N TR13 PBFREE

In Stock: 2.102

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp113.195	Rp113.195
	Rp75.586	Rp755.860
	Rp54.304	Rp5.430.400
	Rp49.167	Rp24.583.500
	Rp47.333	Rp47.333.000
Full Reel (Order in multiples of 2500)
	Rp39.994	Rp99.985.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Central Semiconductor
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	11.5 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 1.4 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	2.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	84 W
Channel Mode:	Depletion
Brand:	Central Semiconductor
Configuration:	Single
Fall Time:	4 ns
Maximum Operating Frequency:	100 kHz
Minimum Operating Frequency:	0 Hz
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	GaN FETs
Rise Time:	4 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Technology:	GaN
Typical Turn-Off Delay Time:	1.7 ns
Typical Turn-On Delay Time:	1.4 ns

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Datasheet

CDF56G6511N TR13 PBFREE Datasheet (PDF)

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GaN N-Channel FETs

Central Semiconductor GaN N-Channel FETs excel in high voltage and low R_DS(ON), making them ideal for efficient soft-switching applications. Central Semiconductor GaN FETs come in 100V (60A), 150V (60A), 650V (11A), 650V (17A), and 700V (18A) versions. The devices are available in practical surface-mount, chip-scale packages, and bare dies. Ideally, these FETs are used in switch-mode power supplies, high-power chargers, and Electric Vehicle (EV) inverters.