CG2H40025F

MACOM
941-CG2H40025F
CG2H40025F

Mfr.:

Description:
GaN FETs GaN HEMT DC-6.0GHz, 25 Watt

Datasheet:
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Learn more about MACOM CG2H40025F

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
Screw Mount
440166
N-Channel
120 V
3 A
- 3.8 V
- 40 C
+ 150 C
6 GHz
0 Hz
GaN
Brand: MACOM
Gain: 15 dB
Output Power: 25 W
Packaging: Tray
Product Type: GaN FETs
Factory Pack Quantity: 40
Subcategory: Transistors
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Unit Weight: 10,566 g
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Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

CG2H40xx & CG2H30xx GaN HEMTs

MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.

In Stock: 420

Stock:
420
Can Dispatch Immediately
On Order:
880
Expected 16/10/2026
720
Expected 26/10/2026
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp4.576.042,78 Rp4.576.042,78
Rp3.864.217,98 Rp38.642.179,80

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