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DMG1012UW-7

Name: Diodes Incorporated DMG1012UW-7
Brand: Diodes Incorporated
SKU: 621-DMG1012UW-7
Price: 5137 IDR
Availability: InStock

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Mouser No:

621-DMG1012UW-7

Mfr. No:

DMG1012UW-7

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET N-CHANNEL SOT-323

Datasheet:

DMG1012UW-7 Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMG1012UW-7

In Stock: 41.885

Stock:: 41.885

Can Dispatch Immediately

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On Order:: 54.000

Expected 17/07/2026
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp5.137	Rp5.137
	Rp3.082	Rp30.820
	Rp1.926	Rp192.600
	Rp1.431	Rp715.500
	Rp1.266	Rp1.266.000
Full Reel (Order in multiples of 3000)
	Rp936	Rp2.808.000
	Rp844	Rp5.064.000
	Rp734	Rp6.606.000
	Rp697	Rp16.728.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-323-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	1 A
Rds On - Drain-Source Resistance:	450 mOhms
Vgs - Gate-Source Voltage:	- 6 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	500 mV
Qg - Gate Charge:	736.6 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	290 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Fall Time:	12.3 ns
Product Type:	MOSFETs
Rise Time:	7.4 ns
Series:	DMG1012
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26.7 ns
Typical Turn-On Delay Time:	5.1 ns
Unit Weight:	6 mg

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Datasheet

DMG1012UW-7 Datasheet (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMx Enhancement Mode MOSFETs

Diodes Incorporated DMx series enhancement mode MOSFETs feature low on-resistance and fast switching, making them ideal for high efficiency power management applications. Diodes Incorporated DMx enhancement mode MOSFETs are also optimized for motor control, backlighting, and DC-DC converter applications. Diodes Incorporated DMx series includes complementary dual, complementary pair, P-channel, and N-channel enhancement mode MOSFETs.