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DMN2990UFZ-7B

Name: Diodes Incorporated DMN2990UFZ-7B
Brand: Diodes Incorporated
SKU: 621-DMN2990UFZ-7B
Price: 8806 IDR
Availability: InStock

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Mouser No:

621-DMN2990UFZ-7B

Mfr. No:

DMN2990UFZ-7B

Mfr.:

Diodes Incorporated

Description:

MOSFETs 20V N-Ch Enh FET Dual .25A .32W 389pF

Datasheet:

DMN2990UFZ-7B Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMN2990UFZ-7B

In Stock: 12.256

Stock:: 12.256 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp8.806	Rp8.806
	Rp5.375	Rp53.750
	Rp3.412	Rp341.200
	Rp2.568	Rp1.284.000
	Rp2.055	Rp2.055.000
	Rp1.798	Rp8.990.000
Full Reel (Order in multiples of 10000)
	Rp1.688	Rp16.880.000
	Rp1.559	Rp31.180.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	X2-DFN0606-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	250 mA
Rds On - Drain-Source Resistance:	990 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	320 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	7.7 ns
Forward Transconductance - Min:	180 mS
Product Type:	MOSFETs
Rise Time:	2.1 ns
Series:	DMN2990
Factory Pack Quantity:	10000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	3.5 ns
Unit Weight:	1 mg

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Datasheet

DMN2990UFZ-7B Datasheet (PDF)

PCN

Product Change Notification (PDF)

Environmental Compliance (PDF)

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMxx Miniature Enhancement Mode MOSFETs

Diode Inc. DMxx Miniature Enhancement Mode MOSFETs are designed to minimize on-state resistance (R_DS(ON)). They maintain superior switching performance, making them ideal for high-efficiency power management applications. The DMN31D5UFZ and DMN2990UFZ are N-Channel enhancement mode MOSFETs and the DMP32D9UFZ is a P-Channel Enhancement Mode MOSFET.