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FDMS86181

Name: onsemi FDMS86181
Brand: onsemi
SKU: 512-FDMS86181
Price: 57606 IDR
Availability: OutOfStock

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Mouser No:

512-FDMS86181

Mfr. No:

FDMS86181

Mfr.:

onsemi

Description:

MOSFETs 100V/20V N-Chnl Power Trench MOSFET

Datasheet:

FDMS86181 Datasheet

ECAD Model:

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More Information

Learn more about onsemi FDMS86181

Availability

Stock:: 0

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On Order:: 8.992
Factory Lead Time:: 22

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp57.606	Rp57.606
	Rp33.573	Rp335.730
	Rp26.602	Rp2.660.200
	Rp24.767	Rp12.383.500
Full Reel (Order in multiples of 3000)
	Rp20.364	Rp61.092.000
24.000	Quote

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	Power-56-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	124 A
Rds On - Drain-Source Resistance:	12 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	6 ns
Forward Transconductance - Min:	116 S
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	FDMS86181
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	90 mg

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Datasheet

FDMS86181 Datasheet

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Shielded Gate PowerTrench® MOSFETs

onsemi Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDS_ON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These devices have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. The power density of these MOSFETs allows wider MOSFET de-rating. These devices are 100% UIL tested and are available in an MSL1 robust package design.