FFSH2065BDN-F085

onsemi
863-FFSH2065BDN-F085
FFSH2065BDN-F085

Mfr.:

Description:
SiC Schottky Diodes 650V 20A SIC SBD

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about onsemi FFSH2065BDN-F085

In Stock: 39

Stock:
39 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 39 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp173.553 Rp173.553
Rp92.647 Rp926.470
Rp92.464 Rp11.095.680
Rp89.895 Rp45.846.450

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
Dual Anode Common Cathode
20 A
650 V
1.38 V
42 A
40 uA
- 55 C
+ 175 C
FFSH2065BDN_F085
AEC-Q101
Tube
Brand: onsemi
Pd - Power Dissipation: 65 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 30
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Vr - Reverse Voltage: 650 V
Unit Weight: 5,457 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

USHTS:
8541100080
ECCN:
EAR99

FFSPx065BDN-F085 Automotive SiC Schottky Diodes

onsemi FFSPx065BDN-F085 Automotive Silicon Carbide (SiC) Schottky Diodes are AEC-Q101-qualified devices designed to leverage the advantages of Silicon Carbide (Si) over Silicon. The FFSPx065BDN-F085 SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also offer temperature-independent switching and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size/cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.