It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

FGH40T120SQDNL4

Name: onsemi FGH40T120SQDNL4
Brand: onsemi
SKU: 863-FGH40T120SQDNL4
Price: 183643 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-FGH40T120SQDNL4

Mfr. No:

FGH40T120SQDNL4

Mfr.:

onsemi

Description:

IGBTs IGBT 1200V 40A UFS

Datasheet:

FGH40T120SQDNL4 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi FGH40T120SQDNL4

In Stock: 259

Stock:: 259 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp183.643	Rp183.643
	Rp108.792	Rp1.087.920
	Rp96.683	Rp9.668.300

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-4
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.78 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	160 A
Pd - Power Dissipation:	454 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FGH40T120SQDNL4
Packaging:	Tube
Brand:	onsemi
Gate-Emitter Leakage Current:	200 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	450
Subcategory:	IGBTs
Unit Weight:	9,195 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

FGH40T120SQDNL4 Datasheet

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

1200V Field Stop Trench IGBTs

onsemi 1200V Field Stop Trench IGBTs feature minimized conduction losses by having a VCE(SAT) of 1.8V, lower than previous fast switching NPT IGBTs. The 1200V field stop trench IGBTs target hard switching industrial applications such as solar inverters, uninterruptible power supplies (UPS), and welders. The 1200V field stop trench IGBT series operates at high switching frequencies, and is 100% tested for clamped inductive switching at current levels of four times the rated current to guarantee a larger safe operating area. onsemi 1200V Field Stop Trench IGBTs are available in TO-247-3, TO-247-4, and DPAK-3 packages, and are offered in 15A, 25A, and 40A ratings.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.