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GCMX003A120S3B1-N

Name: SemiQ GCMX003A120S3B1-N
Brand: SemiQ
SKU: 148-GCMX003A120S3B1N
Price: 4379741 IDR
Availability: InStock

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Mouser No:

148-GCMX003A120S3B1N

Mfr. No:

GCMX003A120S3B1-N

Mfr.:

SemiQ

Description:

MOSFET Modules 1200V, 3mohm, 625A SiC MOSFET Half Bridge Module

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GCMX003A120S3B1-N Datasheet (PDF)

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Learn more about SemiQ GCMX003A120S3B1-N

In Stock: 10

Stock:: 10 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp4.379.741	Rp4.379.741
	Rp4.140.325	Rp41.403.250
105	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	S3
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	625 A
Rds On - Drain-Source Resistance:	5.5 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.113 kW
Series:	GCMX
Packaging:	Bulk
Brand:	SemiQ
Country of Assembly:	US
Country of Diffusion:	Not Available
Country of Origin:	US
Fall Time:	28 ns
Height:	30 mm
Length:	106.4 mm
Product:	Modules
Product Type:	MOSFET Modules
Rise Time:	21 n
Factory Pack Quantity:	15
Subcategory:	Discrete and Power Modules
Type:	Half Bidge Module
Typical Turn-Off Delay Time:	138 ns
Typical Turn-On Delay Time:	79 ns
Vf - Forward Voltage:	4 V
Width:	61.4 mm

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Datasheet

GCMX003A120S3B1-N Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GCMX 1200V SiC MOSFET Half-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The standout feature of these modules is the robust 1200V drain-source voltage. The GCMX half-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.