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GCMX005A120S7B1

Name: SemiQ GCMX005A120S7B1
Brand: SemiQ
SKU: 148-GCMX005A120S7B1
Price: 2713557 IDR
Availability: OutOfStock

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Mouser No:

148-GCMX005A120S7B1

Mfr. No:

GCMX005A120S7B1

Mfr.:

SemiQ

Description:

MOSFET Modules SiC 1200V 5mohm MOSFET Half-Bridge Module

Datasheet:

GCMX005A120S7B1 Datasheet (PDF)

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 10)
	Rp2.713.557	Rp27.135.570
100	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	348 A
Rds On - Drain-Source Resistance:	4.9 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	1.042 kW
Series:	GCMX
Packaging:	Reel
Brand:	SemiQ
Fall Time:	25 ns
Product Type:	MOSFET Modules
Rise Time:	20 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Type:	Half-Bridge
Typical Turn-Off Delay Time:	96 ns
Typical Turn-On Delay Time:	61 ns

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Datasheet

GCMX005A120S7B1 Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GCMX 1200V SiC MOSFET Half-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The standout feature of these modules is the robust 1200V drain-source voltage. The GCMX half-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.