GCMX040A120B3H1P

SemiQ
148-GCMX040A120B3H1P
GCMX040A120B3H1P

Mfr.:

Description:
MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module

ECAD Model:
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In Stock: 31

Stock:
31 Can Dispatch Immediately
Factory Lead Time:
2 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp1.058.381 Rp1.058.381
Rp841.898 Rp8.418.980
Rp778.788 Rp77.878.800
Full Reel (Order in multiples of 40)
Rp841.898 Rp33.675.920
500 Quote

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: MOSFET Modules
RoHS:  
REACH - SVHC:
SiC
Press Fit
N-Channel
1.2 kV
53 A
38 mOhms
- 5 V, + 20 V
1.8 V
- 40 C
+ 175 C
208 W
GCMX
Reel
Cut Tape
Brand: SemiQ
Fall Time: 12 ns
Product Type: MOSFET Modules
Rise Time: 6 ns
Factory Pack Quantity: 40
Subcategory: Discrete and Power Modules
Type: Full Bridge
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 16 ns
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

GCMX 1200V SiC MOSFET Full-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.