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GE04MPS06A

Name: Navitas Semiconductor GE04MPS06A
Brand: GeneSiC Semiconductor
SKU: 905-GE04MPS06A
Price: 35408 IDR
Availability: InStock

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Mouser No:

905-GE04MPS06A

Mfr. No:

GE04MPS06A

Mfr.:

GeneSiC Semiconductor

Description:

SiC Schottky Diodes 650V 4A TO-220-2 SiC Schottky MPS

Lifecycle:

New Product:

New from this manufacturer.

ECAD Model:

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In Stock: 2.075

Stock:: 2.075 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp35.408	Rp35.408
	Rp30.821	Rp308.210
	Rp29.170	Rp729.250
	Rp26.785	Rp2.678.500
	Rp25.317	Rp6.329.250
	Rp24.217	Rp12.108.500
	Rp23.299	Rp23.299.000
	Rp22.015	Rp55.037.500
	Rp21.098	Rp105.490.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Navitas Semiconductor
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-220-2
Configuration:	Single
If - Forward Current:	4 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.25 V
Ifsm - Forward Surge Current:	22 A
Ir - Reverse Current:	1 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	SiC Schottky MPS
Packaging:	Tube
Brand:	GeneSiC Semiconductor
Pd - Power Dissipation:	55 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V
Part # Aliases:	GEXXMPS06X
Unit Weight:	2 g

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USHTS:: 8541100080
ECCN:: EAR99

650V, 1200V, & 1700V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V, 1200V, and 1700V SiC Schottky MPS™ Diodes provide low standby power losses and improved circuit efficiency. The 650V SiC Diodes have a forward current range of 6A to 20A. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A.

650V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes combine excellent forward and switching characteristics with robustness and thermal conductivity. The 650V diodes feature superior system ruggedness, zero recovery losses, and smaller heat sink requirements. These diodes enable extremely fast switching, reduced cooling requirements, zero reverse recovery current, and increased system power density. GeneSiC Semiconductor 650V SiC Schottky MPS Diodes are ideal for ease of paralleling without thermal runaway. The diodes are available in a variety of packages, including TO-220, TO-247, and SOT-227.