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IAUCN08S7N019TATMA1

Name: Infineon IAUCN08S7N019TATMA1
Brand: Infineon Technologies
SKU: 726-IAUCN08S7N019TAT
Price: 73017 IDR
Availability: InStock

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Mouser No:

726-IAUCN08S7N019TAT

Mfr. No:

IAUCN08S7N019TATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs 80 V, N-Ch, 1.94 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IAUCN08S7N019TATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IAUCN08S7N019TATMA1

In Stock: 5.955

Stock:: 5.955 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp73.017	Rp73.017
	Rp48.067	Rp480.670
	Rp33.757	Rp3.375.700
	Rp30.271	Rp15.135.500
	Rp28.620	Rp28.620.000
Full Reel (Order in multiples of 2000)
	Rp25.868	Rp51.736.000
10.000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-LHDSO-10-2
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	223 A
Rds On - Drain-Source Resistance:	1.94 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	68 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	180 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	17 ns
Product Type:	MOSFETs
Rise Time:	16 ns
Series:	OptiMOS 7
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	14 ns
Part # Aliases:	IAUCN08S7N019T SP005981924

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Datasheet

IAUCN08S7N019TATMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 7 Automotive Power MOSFETs

Infineon Technologies is introducing its leading OptiMOS™ 7 Automotive Power MOSFETs technology with remarkably low on-state resistance, reduced switching losses, and enhanced ruggedness. OptiMOS 7 redefines the landscape of automotive power MOSFETs. The OptiMOS 7 MOSFET technology from Infineon establishes a new standard for automotive applications, allowing performance and efficiency while addressing the challenges of tomorrow's automotive systems.

OptiMOS™ 7 80V Automotive Power MOSFETs

Infineon Technologies OptiMOS™ 7 80V Automotive Power MOSFETs are built with Infineon’s leading-edge, power semiconductor technology. These MOSFETs are designed specifically for the high performance, quality, and robustness needed for demanding automotive applications. The OptiMOS™ 7 80V MOSFETs operate with a ±20V_GS gate source voltage and a temperature range of -55°C to 175°C. These MOSFETs are offered in top-side cooled SSO10T 5x7mm2 SMD package. The SSO10T package helps users achieve advancements in cooling and power density. The 80V power MOSFETs are MSL-1 rated, RoHS compliant, and 100% avalanche tested. These power MOSFETs are ideal for general automotive applications.