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IDH04G65C5XKSA2

Name: Infineon IDH04G65C5XKSA2
Brand: Infineon Technologies
SKU: 726-IDH04G65C5XKSA2
Price: 42196 IDR
Availability: InStock

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Mouser No:

726-IDH04G65C5XKSA2

Mfr. No:

IDH04G65C5XKSA2

Mfr.:

Infineon Technologies

Description:

SiC Schottky Diodes SIC DIODES

Datasheet:

IDH04G65C5XKSA2 Datasheet (PDF)

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In Stock: 2.693

Stock:: 2.693 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp42.196	Rp42.196
	Rp20.731	Rp207.310
	Rp18.346	Rp1.834.600
	Rp12.108	Rp6.054.000
	Rp11.760	Rp58.800.000
	Rp11.650	Rp116.500.000
25.000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220-2
Configuration:	Single
If - Forward Current:	4 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	38 A
Ir - Reverse Current:	200 nA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	XDH04G65
Packaging:	Tube
Brand:	Infineon Technologies
Pd - Power Dissipation:	48 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	500
Subcategory:	Diodes & Rectifiers
Tradename:	CoolSiC
Vr - Reverse Voltage:	650 V
Part # Aliases:	IDH04G65C5 SP001632402
Unit Weight:	2 g

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Datasheet

IDH04G65C5XKSA2 Datasheet (PDF)

Models

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Infineon's Latest Power and Sensing Guide (PDF)

SPICE Models

Simulation Model SiC Diodes CoolSiC™ PSpice Generation 5 650V IDHxxG65C5 (Zip)

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CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Q_c x V_f).

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

CoolSiC™ Schottky Diodes

Infineon CoolSiC™ Schottky Diodes provide a relatively high on-state resistance and leakage current. In SiC material, Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of SiC Schottky products covers 600V and 650V to 1200V Schottky diodes. Combining a fast silicon-based switch with a CoolSiC™ Schottky diode is often termed a “hybrid” solution. In recent years, Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products in applications like solar and uninterruptible power supplies (UPS).