IKW40N120T2

Infineon Technologies
726-IKW40N120T2
IKW40N120T2

Mfr.:

Description:
IGBTs LOW LOSS DuoPack 1200V 40A

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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Learn more about Infineon Technologies IKW40N120T2

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
484
4
Pending
480
Expected 05/11/2026
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp138.329 Rp138.329
Rp97.601 Rp976.010
Rp81.456 Rp8.145.600
Rp64.394 Rp30.909.120

Alternative Packaging

Mfr. Part No.:
IKW40N120T2FKSA1
Packaging:
Tube
Availability:
In Stock
Price:
Rp140.163
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
1.75 V
- 20 V, 20 V
75 A
480 W
- 40 C
+ 175 C
Trenchstop IGBT2
Tube
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: IKW4N12T2XK SP000244962 IKW40N120T2FKSA1
Unit Weight: 38 g
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Attributes selected: 0

Datasheet

Product Catalogs

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

1200V Gen8 IGBTs

Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-saving applications. The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. Infineon 1200V Gen8 IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction temperature up to +175°C.

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