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IMYH200R050M1HXKSA1

Name: Infineon IMYH200R050M1HXKSA1
Brand: Infineon Technologies
SKU: 726-IMYH200R050M1HXK
Price: 396457 IDR
Availability: InStock

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Mouser No:

726-IMYH200R050M1HXK

Mfr. No:

IMYH200R050M1HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package

Datasheet:

IMYH200R050M1HXKSA1 Datasheet (PDF)

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Learn more about Infineon Technologies IMYH200R050M1HXKSA1

In Stock: 10

Stock:: 10

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On Order:: 720

Expected 12/03/2026

720

Expected 20/08/2026
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp396.457	Rp396.457
	Rp292.068	Rp2.920.680
	Rp279.226	Rp27.922.600
	Rp270.420	Rp129.801.600

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	2 kV
Id - Continuous Drain Current:	48 A
Rds On - Drain-Source Resistance:	64 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	82 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	348 W
Channel Mode:	Enhancement
Tradename:	CoolSIC
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	10 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	9 ns
Factory Pack Quantity:	240
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	17 ns
Part # Aliases:	IMYH200R050M1H SP005427372

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Datasheet

IMYH200R050M1HXKSA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

2000V CoolSiC™ MOSFETs

Infineon Technologies 2000V CoolSiC™ MOSFETs are trench MOSFETs in a TO-247PLUS-4-HCC package. These MOSFETs are designed to deliver increased power density without sacrificing the system's reliability, even under demanding high-voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability using the .XT interconnection technology and enable top efficiencies in various applications. The 2000V MOSFETs feature a benchmark gate threshold voltage of 4.5V and offer very-low switching losses. Typical applications include energy storage systems, EV charging, string inverter, and solar power optimizer.