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IPB095N20NM6ATMA1

Name: Infineon IPB095N20NM6ATMA1
Brand: Infineon Technologies
SKU: 726-IPB095N20NM6ATMA
Price: 111177 IDR
Availability: InStock

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Mouser No:

726-IPB095N20NM6ATMA

Mfr. No:

IPB095N20NM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 6 Power-Transistor, 200 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IPB095N20NM6ATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IPB095N20NM6ATMA1

In Stock: 1.818

Stock:: 1.818 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp111.177	Rp111.177
	Rp77.604	Rp776.040
	Rp62.743	Rp6.274.300
	Rp56.139	Rp28.069.500
Full Reel (Order in multiples of 1000)
	Rp47.516	Rp47.516.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TO263-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	116 A
Rds On - Drain-Source Resistance:	8.7 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	53 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	11 ns
Forward Transconductance - Min:	23 S
Product Type:	MOSFETs
Rise Time:	30 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	15 ns
Part # Aliases:	IPB095N20NM6 SP006070075

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Datasheet

IPB095N20NM6ATMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.

OptiMOS™ 6 200V Power MOSFETs

Infineon Technologies OptiMOS™ 6 200V Power MOSFETs are N-channel normal level MOSFETs available in PG-TO263-3, PG-TO220-3, and PG-HDSOP-16 packages. These MOSFETs feature excellent gate charge x R_DS(on) product (FOM), very low reverse recovery charge (Q_rr), and low on‑resistance R_DS(on). The OptiMOS™ 6 200V MOSFETs operate at 175°C temperature. These MOSFETs are halogen‑free according to IEC61249‑2‑21 and Moisture Sensitivity Level (MSL 1) classified according to J‑STD-020 standards. The OptiMOS™ 6 200V MOSFETs are ideal for renewables, motor control, audio amplifiers, and industrial applications.